Semiconductor light emitting device with concave-convex pattern and method for manufacturing the same
US8304795B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2006 |
| Grant date | Nov 6, 2012 |
| Priority date | — |
| Expiry date | Apr 17, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/872
Abstract
A semiconductor lamination portion (6) is formed by laminating nitride semiconductor layers including an n-type layer (3) and a p-type layer (5) on one side of a substrate (1) so as to form a light emitting layer, and a light transmitting conductive layer (7) is provided at a surface side of the semiconductor lamination portion. A concave-convex pattern, i.e., concaves (7a), is provided on a surface of the light transmitting conductive layer. A p-side electrode (8) is provided on the light transmitting conductive layer, and an n-side electrode (9) is electrically connected to the n-type layer exposed by etching a part of the semiconductor lamination portion. Light emitted from the light emitting layer is therefore totally reflected repeatedly in the semiconductor lamination portion and the substrate and can be effectively taken out without attenuation, so external quantum efficiency can be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.