Power semiconductor device
US8304814B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 29, 2011 |
| Grant date | Nov 6, 2012 |
| Priority date | — |
| Expiry date | Jun 29, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D18/40
Abstract
A bipolar power semiconductor device is provided with an emitter electrode on an emitter side and a collector electrode on a collector side. The device has a trench gate electrode and a structure with a plurality of layers of different conductivity types in the following order: at least one n doped source region, a p doped base layer, which surrounds the at least one source region, an n doped enhancement layer, a p doped additional well layer, an additional n doped enhancement layer, an additional p doped well layer, an n doped drift layer and a p doped collector layer. The trench gate electrode has a gate bottom, which is located closer to the collector side than the additional enhancement layer bottom.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.