Integrated circuit including a ferroelectric memory cell and method of manufacturing the same

US8304823B2 · kind B2 · utility

Assignee

• NAMLAB GGMBH · DE

Inventor

• Tim Boescke · Dresden, DE

Key dates

• Filing date: Apr 21, 2008
• Grant date: Nov 6, 2012
• Expiry date: May 17, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/62
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for manufacturing an integrated circuit including a ferroelectric memory cell is disclosed. One embodiment of the method includes: forming a amorphous oxide layer over a carrier, the amorphous layer including: O and any of the group of: Hf, Zr and (Hf,Zr), forming a covering layer on the amorphous layer, and heating the amorphous layer up to a temperature above its crystallization temperature to at least partly alter its crystal state from amorphous to crystalline, resulting in a crystallized oxide layer.