Patent · US Active

Trench-based power semiconductor devices with increased breakdown voltage characteristics

US8304829B2 · kind B2 · utility

33Cited by
185References
28Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 20, 2009
Grant dateNov 6, 2012
Priority date—
Expiry dateMay 4, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D64/519

Abstract

Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.