Inventor · Sandy, UT, US

Ashok Challa

40Patents
18h-index
41Co-inventors
81Inventor score

Filing activity: Aug 16, 2000 → Jun 13, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US7345342B2 Power semiconductor devices and methods of manufacture Emerging Cross-Sectional Technologies 270 Expired
US8143124B2 Methods of making power semiconductor devices with thick bottom oxide layer Emerging Cross-Sectional Technologies 132 Active
US7982265B2 Trenched shield gate power semiconductor devices and methods of manufacture Emerging Cross-Sectional Technologies 71 Active
US7638841B2 Power semiconductor devices and methods of manufacture Emerging Cross-Sectional Technologies 69 Active
US7393749B2 Charge balance field effect transistor Electricity 62 Active
US7446374B2 High density trench FET with integrated Schottky diode and method of manufacture Electricity 55 Active
US7855415B2 Power semiconductor devices having termination structures and methods of manufacture Emerging Cross-Sectional Technologies 34 Active
US8304829B2 Trench-based power semiconductor devices with increased breakdown voltage characteristics Electricity 33 Active
US6696726B1 Vertical MOSFET with ultra-low resistance and low gate charge Electricity 32 Expired
US6683363B2 Trench structure for semiconductor devices Electricity 32 Expired
US7713822B2 Method of forming high density trench FET with integrated Schottky diode Electricity 24 Active
US7416948B2 Trench FET with improved body to gate alignment Electricity 24 Active
US7514322B2 Shielded gate field effect transistor Electricity 24 Active
US7382019B2 Trench gate FETs with reduced gate to drain charge Electricity 23 Expired
US7768064B2 Structure and method for improving shielded gate field effect transistors Electricity 22 Active
US7625799B2 Method of forming a shielded gate field effect transistor Electricity 22 Active
US8803207B2 Shielded gate field effect transistors Electricity 20 Active
US7485532B2 Method of forming trench gate FETs with reduced gate to drain charge Electricity 18 Active
US7745289B2 Method of forming a FET having ultra-low on-resistance and low gate charge Electricity 10 Active
US8193581B2 Trench-based power semiconductor devices with increased breakdown voltage characteristics Electricity 8 Active
US8786045B2 Power semiconductor devices having termination structures Emerging Cross-Sectional Technologies 7 Active
US8592895B2 Field effect transistor with source, heavy body region and shielded gate Electricity 7 Active
US8564024B2 Trench-based power semiconductor devices with increased breakdown voltage characteristics Electricity 6 Active
US8963212B2 Trench-based power semiconductor devices with increased breakdown voltage characteristics Electricity 6 Active
US7767524B2 Method and structure for forming a shielded gate field effect transistor Electricity 5 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.