Patent · US Active

Semiconductor device including spacer element

US8304884B2 · kind B2 · utility

1Cited by

4References

23Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Ivan Nikitin · Regensburg, DE
Joachim Mahler · Regensburg, DE
Thomas Behrens · Madison, US

Key dates

Filing date	Mar 11, 2009
Grant date	Nov 6, 2012
Priority date	—
Expiry date	Mar 11, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/30105
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a metal carrier and a spacer element attached to the metal carrier. The semiconductor device includes a first sintered metal layer on the spacer element and a semiconductor chip on the first sintered metal layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.