Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device
US8306082B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2010 |
| Grant date | Nov 6, 2012 |
| Priority date | — |
| Expiry date | Jul 29, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3213
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A group-III nitride semiconductor laser device comprises a laser structure including a support base and a semiconductor region, and an electrode provided on the semiconductor region of the laser structure. The support base comprises a hexagonal group-III nitride semiconductor and has a semipolar primary surface, and the semiconductor region is provided on the semipolar primary surface of the support base. The semiconductor region includes a first cladding layer of a first conductivity type gallium nitride-based semiconductor, a second cladding layer of a second conductivity type gallium nitride-based semiconductor, and an active layer. The first cladding layer, the second cladding layer, and the active layer are arranged along a normal axis to the semipolar primary surface. The active layer comprises a gallium nitride-based semiconductor layer. The c-axis of the hexagonal group-III nitride semiconductor of the support base tilts at a finite angle ALPHA with respect to a normal axis toward an a-axis of the hexagonal group-III nitride semiconductor. The laser structure includes first and second fractured faces intersecting with an a-n plane defined by the normal axis and the a-axis o…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.