Device for the temperature control of the surface temperatures of substrates in a CVD reactor

US8308867B2 · kind B2 · utility

Assignee

• Aixtron, Inc. · DE

Inventors

• Walter Franken · Eschweiler, DE
• Johannes Käppeler · Harsewinkel, DE

Key dates

• Filing date: Jun 3, 2008
• Grant date: Nov 13, 2012
• Expiry date: May 29, 2029

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/52
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

The invention relates to a CVD reactor having a plurality of rotary tables (2) supported on a rotationally driven susceptor (1) on dynamic gas cushions (3), wherein each gas cushion (3) is formed by an individually controlled gas flow and each gas flow, dependant on a surface temperature measured by a temperature measuring device (4), can be varied by an individual actuator (5). The invention further comprises a carrier (6), carrying the susceptor (1) and rotating with the susceptor (1). A common gas supply line (7) ending in the carrier (6) is key to the invention and provides the actuators (5) arranged on the carrier (6) with the gas that forms the gas flow.