Method of fabricating oxide material layer with openings attached to device layers
US8309402B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 10, 2011 |
| Grant date | Nov 13, 2012 |
| Priority date | — |
| Expiry date | Oct 10, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method of a semiconductor structure includes providing a substrate having an upper surface and a bottom surface. First openings are formed in the substrate. An oxidization process is performed to oxidize the substrate having the first openings therein to form an oxide-containing material layer, and the oxide-containing material layer has second openings therein. A conductive material is filled into the second openings to form conductive plugs. A first device layer is formed a first surface of the oxide-containing material layer, and is partially or fully electrically connected to the conductive plugs. A second device layer is formed on a second surface of the oxide-containing material layer, and is partially or fully electrically connected to the conductive plugs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.