Poly-Si thin film transistor and organic light-emitting display having the same
US8309404B2 · kind B2 · utility
9Cited by
4References
3Claims
0Family size
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Key dates
| Filing date | Jun 30, 2011 |
| Grant date | Nov 13, 2012 |
| Priority date | — |
| Expiry date | Jun 30, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6757
Abstract
A thin film transistor comprises an Si-based channel having a nonlinear electron-moving path, a source and a drain disposed at both sides of the channel, a gate disposed above the channel, an insulator interposed between the channel and the gate, and a substrate supporting the channel and the source and the drain disposed at either side of the channel respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.