Method for forming semiconductor device with buried gate structure
US8309412B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 23, 2010 |
| Grant date | Nov 13, 2012 |
| Priority date | — |
| Expiry date | Feb 7, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/053
Abstract
A method for forming a semiconductor device includes: etching a hard mask layer and a conductive layer formed on a semiconductor substrate, a lower structure being formed on the semiconductor substrate; forming a sacrificial insulating layer at upper parts of the etched hard mask layer and the etched conductive layer of a peripheral circuit region; forming an isolation insulating layer at an upper part of an isolation insulating layer of a cell region; forming spacers at sidewalls of the etched hard mask layer, the etched conductive layer, and the isolation insulating layer of the cell region, respectively; forming storage electrode contact plugs at both sides of each of the spacers, respectively; and removing the sacrificial insulating layer to expose the semiconductor substrate of the peripheral circuit region, and etching the lower structure to expose the semiconductor substrate of the peripheral circuit region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.