Method for self-supported transfer of a fine layer by pulsation after implantation or co-implantation
US8309431B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 28, 2004 |
| Grant date | Nov 13, 2012 |
| Priority date | — |
| Expiry date | Sep 4, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26506
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for self-supported transfer of a fine layer, in which at least one species of ions is implanted in a source-substrate at a specified depth in relation to the surface of the source-substrate. A stiffener is applied in intimate contact with the source-substrate and the source-substrate undergoes a heat treatment at a specified temperature during a specified period of time in order to create an embrittled buried area substantially at the specified depth without causing a thin layer, defined between the surface and the embrittled buried layer in relation to the remainder of the source-substrate, to become thermally detached. A controlled localized energy pulse is applied to the source-substrate in order to cause the self-supported detachment of the thin layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.