Inventor · Castelsarrasin, FR

Konstantin Bourdelle

24Patents
7h-index
30Co-inventors
65Inventor score

Filing activity: Aug 10, 1998 → Feb 18, 2013

Most-cited inventions

PatentTitleAreaCited byStatus
US6136672A Process for device fabrication using a high-energy boron implant Electricity 14 Expired
US7449394B2 Atomic implantation and thermal treatment of a semiconductor layer Electricity 11 Active
US8309431B2 Method for self-supported transfer of a fine layer by pulsation after implantation or co-implantation Electricity 10 Active
US7229898B2 Methods for fabricating a germanium on insulator wafer Electricity 10 Expired
US7670929B2 Method for direct bonding two semiconductor substrates Electricity 9 Active
US8058158B2 Hybrid semiconductor substrate including semiconductor-on-insulator region and method of making the same Electricity 8 Active
US7387947B2 Method for transferring a thin layer including a controlled disturbance of a crystalline structure Electricity 8 Expired
US8241942B2 Method of fabricating a back-illuminated image sensor Electricity 5 Active
US7575988B2 Method of fabricating a hybrid substrate Electricity 5 Active
US7799651B2 Method of treating interface defects in a substrate Electricity 3 Active
US7645486B2 Method of manufacturing a silicon dioxide layer Electricity 3 Active
US9035474B2 Method for manufacturing a semiconductor substrate Electricity 3 Active
US6930006B2 Electronic circuit structure with improved dielectric properties Electricity 3 Expired
US8263475B2 Method for manufacturing heterostructures Electricity 3 Active
US7407548B2 Method of manufacturing a wafer Electricity 2 Expired
US7833877B2 Method for producing a semiconductor substrate Electricity 2 Active
US9275892B2 Method of high temperature layer transfer Electricity 2 Active
US7572331B2 Method of manufacturing a wafer Electricity 2 Active
US6306780A Method for making a photoresist layer having increased resistance to blistering, peeling, lifting, or reticulation Electricity 2 Expired
US7767545B2 Substrate production method and substrate including amorphization and recrystallizing a top region Electricity 1 Expired
US7871900B2 Quality of a thin layer through high-temperature thermal annealing Electricity 1 Active
US8309426B2 Methods for manufacturing multilayer wafers with trench structures Electricity 1 Active
US9698063B2 Method of testing a semiconductor-on-insulator structure and application of said test to the fabrication of such a structure Electricity 0 Active
US9018678B2 Method for forming a Ge on III/V-on-insulator structure Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.