Epitaxial lift off stack having a universally shrunk handle and methods thereof
US8309432B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 29, 2009 |
| Grant date | Nov 13, 2012 |
| Priority date | — |
| Expiry date | Feb 28, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/68381
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the invention generally relate to epitaxial lift off (ELO) thin films and devices and methods used to form such films and devices. In one embodiment, a method for forming an ELO thin film is provided which includes depositing an epitaxial material over a sacrificial layer on a substrate, adhering a universally shrinkable support handle onto the epitaxial material, wherein the universally shrinkable support handle contains a shrinkable material, and shrinking the support handle to form tension in the support handle and compression in the epitaxial material during a shrinking process. The method further includes removing the sacrificial layer during an etching process, peeling the epitaxial material from the substrate while forming an etch crevice therebetween, and bending the support handle to have substantial curvature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.