Patent · US Active

Crack stops for semiconductor devices

US8309435B2 · kind B2 · utility

12Cited by

8References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Erdem Kaltalioglu · Newburgh, US
Michael Beck · Milpitas, US

Key dates

Filing date	Jun 14, 2011
Grant date	Nov 13, 2012
Priority date	—
Expiry date	Jun 14, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Crack stops for semiconductor devices, semiconductor devices, and methods of manufacturing semiconductor devices are disclosed. In one embodiment, a barrier structure for a semiconductor device includes a plurality of substantially V-shaped regions. Each of the plurality of substantially V-shaped regions is disposed adjacent another of the plurality of substantially V-shaped regions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.