Method of fabricating a FinFET device
US8310013B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2010 |
| Grant date | Nov 13, 2012 |
| Priority date | — |
| Expiry date | Sep 21, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/405
Abstract
A FinFET device and method for fabricating a FinFET device is disclosed. An exemplary FinFET device includes a substrate of a crystalline semiconductor material having a top surface of a first crystal plane orientation; a fin structure of the crystalline semiconductor material overlying the substrate; a gate structure over a portion of the fin structure; an epitaxy layer over another portion of the fin structure, the epitaxy layer having a surface having a second crystal plane orientation, wherein the epitaxy layer and underlying fin structure include a source and drain region, the source region being separated from the drain region by the gate structure; and a channel defined in the fin structure from the source region to the drain region, and aligned in a direction parallel to both the surface of the epitaxy layer and the top surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.