Electronic device and manufacturing method thereof

US8310027B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Christian Russ · Diedorf, DE
• Christian Pacha · Birkenfeld, DE
• Snezana Jenei · Munich, DE
• Klaus Schruefer · Baldham, DE

Key dates

• Filing date: Jun 12, 2008
• Grant date: Nov 13, 2012
• Expiry date: Aug 9, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/85

Abstract

Embodiments relate to a bipolar transistor that includes a body region having a fin structure. At least one terminal region may be formed over at least a portion of the body region. The at least one terminal region may be formed as an epitaxially grown region. Embodiments also relate to a vertically integrated electronic device that includes a first terminal region, a second terminal region and a third terminal region. The second terminal region may be arranged over at least a portion of the third terminal region, and at least two of the first, second and third terminal regions may be formed as epitaxially grown regions.