Group III nitride semiconductor free-standing substrate and method of manufacturing the same, group III nitride semiconductor device and method of manufacturing the same
US8310029B2 · kind B2 · utility
3Cited by
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11Claims
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Key dates
| Filing date | May 27, 2010 |
| Grant date | Nov 13, 2012 |
| Priority date | — |
| Expiry date | Dec 10, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0137
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A group III nitride semiconductor free-standing substrate includes an as-grown surface, more than half of a region of the as-grown surface including a single crystal plane. The single crystal plane includes an off-angle inclined in an m-axis or a-axis direction from a C-plane with a group III polarity, or in a c-axis or a-axis direction from an M-plane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.