Takeshi Eri
4Patents
2h-index
7Co-inventors
33Inventor score
Filing activity: Jun 26, 2003 → May 27, 2010
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7829913B2 | Porous substrate and its manufacturing method, and gan semiconductor multilayer substrate and its manufacturing method | Electricity | 12 | Active |
| US8310029B2 | Group III nitride semiconductor free-standing substrate and method of manufacturing the same, group III nitride semiconductor device and method of manufacturing the same | Electricity | 3 | Active |
| US8102026B2 | Group-III nitride semiconductor freestanding substrate and manufacturing method of the same | Electricity | 1 | Active |
| US8466471B2 | Nitride semiconductor free-standing substrate and method for making same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.