STT-MRAM cell structure incorporating piezoelectric stress material
US8310861B2 · kind B2 · utility
24Cited by
27References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2008 |
| Grant date | Nov 13, 2012 |
| Priority date | — |
| Expiry date | Sep 3, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory cell including a piezoelectric material, and methods of operating the memory cell are provided. The memory cell includes a stack, and the piezoelectric material may be formed as a layer in the stack or adjacent the layers of the cell stack. The piezoelectric material may be used to induce a transient stress during programming of the memory cell to reduce the critical switching current of the memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.