Read conditions for a non-volatile memory (NVM)
US8310877B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 6, 2011 |
| Grant date | Nov 13, 2012 |
| Priority date | — |
| Expiry date | May 15, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3418
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method and memory are provided for determining a read reference level for a plurality of non-volatile memory cells. The method includes: performing a program operation of the plurality of non-volatile memory cells; determining a program level of a least programmed memory cell of the plurality of memory cells; performing an erase operation of the plurality of non-volatile memory cells; determining an erase level of a least erased memory cell of the plurality of memory cells; determining an operating window between the program level and the erase level; and setting the read reference level to be a predetermined offset from the erase level if the operating window is determined to compare favorably to a predetermined value. The memory includes registers for storing the program level and the erase level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.