Surface profile adjustment using gas cluster ion beam processing
US8313663B2 · kind B2 · utility
8Cited by
10References
20Claims
0Family size
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Key dates
| Filing date | Sep 24, 2008 |
| Grant date | Nov 20, 2012 |
| Priority date | — |
| Expiry date | May 27, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0812
- WIPO fieldOther consumer goods
- WIPO sectorOther fields
Abstract
A method of treating a workpiece is described. The method comprises selectively forming a sacrificial material on one or more regions of a substrate or a layer on the substrate using a gas cluster ion beam (GCIB), and adjusting a surface profile of a surface on the substrate or the layer on the substrate by performing an etching process following the selective formation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.