Exposure mask and method for manufacturing semiconductor device using the same
US8313876B2 · kind B2 · utility
0Cited by
12References
11Claims
0Family size
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Key dates
| Filing date | Jan 29, 2010 |
| Grant date | Nov 20, 2012 |
| Priority date | — |
| Expiry date | Sep 23, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/40
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for manufacturing a semiconductor device comprises forming a photoresist pattern by an exposure process with an exposure mask including a shifter pattern and further performing a reflow process on the photoresist pattern to obtain a line/space pattern having a wave type with a uniform a pattern line-width and an improved profile.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.