Atomic layer deposition encapsulation for power amplifiers in RF circuits
US8313985B2 · kind B2 · utility
7Cited by
8References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2011 |
| Grant date | Nov 20, 2012 |
| Priority date | — |
| Expiry date | Sep 14, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Power amplifiers and methods of coating a protective film of alumina (Al2O3) on the power amplifiers are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the power amplifier in a precisely controlled manner. Thus, the ALD process can form a uniform film that is substantially free of free of pin-holes and voids.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.