Method for fabricating a high-K metal gate MOS

US8313991B2 · kind B2 · utility

Assignee

• Semiconductor Manufacturing International Corp. · CN

Inventors

• Li Jiang · Nanhu, CN
• Mingqi Li · Sammamish, US

Key dates

• Filing date: Jul 7, 2011
• Grant date: Nov 20, 2012
• Expiry date: Jul 7, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/60

Abstract

A method is provided for fabricating a high-K metal gate MOS device. The method includes providing a semiconductor substrate having a surface region, a gate oxide layer on the surface region, a sacrificial gate electrode on the gate oxide layer, and a covering layer on the sacrificial gate electrode, an inter-layer dielectric layer on the semiconductor substrate and the sacrificial gate electrode. The method also includes planarizing the inter-layer dielectric layer to expose a portion of the covering layer atop the sacrificial gate electrode, implanting nitrogen ions into the inter-layer dielectric layer until a depth of implantation is deeper than a thickness of the portion of the covering layer atop the sacrificial gate electrode and polishing the inter-layer dielectric layer to expose a surface of the sacrificial gate electrode, removing the sacrificial gate electrode, and depositing a metal gate.