Method for fabricating semiconductor device
US8314030B2 · kind B2 · utility
2Cited by
3References
21Claims
0Family size
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Key dates
| Filing date | Jun 23, 2009 |
| Grant date | Nov 20, 2012 |
| Priority date | — |
| Expiry date | May 7, 2031 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B37/044
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A method for fabricating a semiconductor device through a chemical mechanical polishing (CMP) process is provided. The CMP process is performed by using a slurry. The semiconductor device fabrication method can ensure the reliability and economical efficiency of the device by performing a CMP process using a CMP slurry having a high polishing selectivity with respect to a target surface, an anti-scratch characteristic, and a high global planarization characteristic.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.