Radiation-emitting semiconductor body

US8314415B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Martin Strassburg · Tegernheim, DE
• Lutz Hoeppel · Alteglofsheim, DE
• Matthias Sabathil · Regensburg, DE
• Matthias Peter · Orpund, CH
• Uwe Strauss · Bad Abbach, DE

Key dates

• Filing date: Jun 20, 2008
• Grant date: Nov 20, 2012
• Expiry date: Apr 19, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/812
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A radiation-emitting semiconductor body includes a contact layer and an active zone. The semiconductor body has a tunnel junction arranged between the contact layer and the active zone. The active zone has a multi-quantum well structure containing at least two active layers that emit electromagnetic radiation when an operating current is impressed into the semiconductor body.