Semiconductor device with multiple component oxide channel
US8314420B2 · kind B2 · utility
15Cited by
5References
31Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2004 |
| Grant date | Nov 20, 2012 |
| Priority date | — |
| Expiry date | Jul 31, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6734
Abstract
One exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more compounds of the formula AxBxOx wherein each A is selected from the group of Ga, In, each B is selected from the group of Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero integer, and each of A and B are different.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.