Non-volatile semiconductor storage device
US8314455B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2011 |
| Grant date | Nov 20, 2012 |
| Priority date | — |
| Expiry date | Jun 9, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/40
Abstract
A non-volatile semiconductor storage device includes: a memory cell area in which a plurality of electrically rewritable memory cells are formed; and a peripheral circuit area in which transistors that configure peripheral circuits to control the memory cells are formed. The memory cell area has formed therein: a semiconductor layer formed to extend in a vertical direction to a semiconductor substrate; a plurality of conductive layers extending in a parallel direction to, and laminated in a vertical direction to the semiconductor substrate; and a property-varying layer formed between the semiconductor layer and the conductive layers and having properties varying depending on a voltage applied to the conductive layers. The peripheral circuit area has formed therein a plurality of dummy wiring layers that are formed on the same plane as each of the plurality of conductive layers and that are electrically separated from the conductive layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.