Under bump metallization for on-die capacitor
US8314474B2 · kind B2 · utility
6Cited by
32References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 25, 2008 |
| Grant date | Nov 20, 2012 |
| Priority date | — |
| Expiry date | Sep 30, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19104
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Various on-chip capacitors and methods of making the same are disclosed. In one aspect, a method of manufacturing a capacitor is provided that includes forming a first conductor structure on a semiconductor chip and forming a passivation structure on the first conductor structure. An under bump metallization structure is formed on the passivation structure. The under bump metallization structure overlaps at least a portion of the first conductor structure to provide a capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.