Systems, methods and solutions for chemical polishing of GaAs wafers
US8318042B2 · kind B2 · utility
1Cited by
1References
20Claims
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Key dates
| Filing date | Sep 29, 2009 |
| Grant date | Nov 27, 2012 |
| Priority date | — |
| Expiry date | Nov 24, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02024
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Chemical polishing solutions and methods are disclosed for the chemical polishing of GaAs wafers. An exemplary chemical polishing solution consistent with the innovations herein may comprise dichloroisocyanurate, sulfonate, acid pyrophosphate, bicarbonate and carbonate. An exemplary chemical polishing method may comprise polishing a wafer in a chemical polishing apparatus in the presence of such a chemical polishing solution. Chemical polishing solutions and methods herein make it possible, for example, to improve wafer quality, decrease costs, and/or reduce environmental pollution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.