Method of manufacturing semiconductor device
US8318412B2 · kind B2 · utility
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4References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2010 |
| Grant date | Nov 27, 2012 |
| Priority date | — |
| Expiry date | Mar 2, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/0335
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is manufactured by a method including processes of trimming and molding resist patterns. A resist layer formed on a substrate is exposed and developed to form the resist patterns. The resist patterns are trimmed using a first gas plasma to change the profiles of the resist patterns. Widths of the trimmed resist patterns are increased using a second gas plasma to form processed resist patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.