Vertical diode using silicon formed by selective epitaxial growth

US8318553B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Christian Russ · Diedorf, DE
• Christian Pacha · Birkenfeld, DE
• Snezana Jenei · Munich, DE
• Klaus Schruefer · Baldham, DE

Key dates

• Filing date: Jan 7, 2011
• Grant date: Nov 27, 2012
• Expiry date: Apr 10, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D12/211

Abstract

Some embodiments relate to an apparatus that exhibits vertical diode activity to occur between a semiconductive body and an epitaxial film that is disposed over a doping region of the semiconductive body. Some embodiments include an apparatus that causes both vertical and lateral diode activity. Some embodiments include a gated vertical diode for a finned semiconductor apparatus. Process embodiments include the formation of vertical-diode apparatus.