Method of producing a hybrid substrate having a continuous buried electrically insulating layer
US8318555B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 29, 2009 |
| Grant date | Nov 27, 2012 |
| Priority date | — |
| Expiry date | Dec 12, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing a hybrid substrate includes preparing a first substrate including a mixed layer and an underlying electrically insulating continuous layer, the mixed layer made up of first single-crystal areas and second adjacent amorphous areas, the second areas making up at least part of the free surface of the first substrate. A second substrate is bonded to the first substrate, the second substrate including on the surface thereof, a reference layer with a predetermined crystallographic orientation. The first substrate is bonded to the second substrate by hydrophobic molecular bonding of at least the amorphous areas. A recrystallization of at least part of the amorphous areas to solid phase is carried out according to the crystallographic orientation of the reference layer, and the two substrates are separated at the bonding interface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.