Compressive polycrystalline silicon film and method of manufacture thereof

US8318575B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Wolfgang Lehnert · Lintach, DE
• Stefan Pompl · Landshut, DE
• Markus Meyer · Annaberg-Buchholz, DE

Key dates

• Filing date: Feb 7, 2011
• Grant date: Nov 27, 2012
• Expiry date: Feb 7, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In one embodiment a method of forming a compressive polycrystalline semiconductive material layer is disclosed. The method comprises forming a polycrystalline semiconductive seed layer over a substrate and forming a silicon layer by depositing silicon directly on the polycrystalline silicon seed layer under amorphous process conditions at a temperature below 600 C.