Method for electron beam induced deposition of conductive material
US8318593B2 · kind B2 · utility
0Cited by
2References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 7, 2009 |
| Grant date | Nov 27, 2012 |
| Priority date | — |
| Expiry date | Aug 7, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76898
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method for electron beam induced deposition of electrically conductive material from a metal carbonyl with the method steps of providing at least one electron beam at a position of a substrate, storing at least one metal carbonyl at a first temperature, and heating the at least one metal carbonyl to at least one second temperature prior to the provision at the position at which the at least one electron beam impacts on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.