Pillar structure having a non-planar surface for semiconductor devices
US8318596B2 · kind B2 · utility
18Cited by
32References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2010 |
| Grant date | Nov 27, 2012 |
| Priority date | — |
| Expiry date | Feb 11, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19041
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A conductive pillar for a semiconductor device is provided. The conductive pillar is formed such that a top surface is non-planar. In embodiments, the top surface may be concave, convex, or wave shaped. An optional capping layer may be formed over the conductive pillar to allow for a stronger inter-metallic compound (IMC) layer. The IMC layer is a layer formed between solder material and an underlying layer, such as the conductive pillar or the optional capping layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.