Immersion lithography wafer edge bead removal for wafer and scanner defect prevention
US8318607B2 · kind B2 · utility
4Cited by
0References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2008 |
| Grant date | Nov 27, 2012 |
| Priority date | — |
| Expiry date | Oct 26, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of performing a single step/single solvent edge bead removal (EBR) process on a photolithography layer stack including a photoresist layer and a top coat layer using propylene glycol monomethyl ether acetate (PGMEA) or a mixture of PGMEA and gamma-butyrolactone (GBL) is disclosed. The single step/single solvent EBR process is compatible with organic and inorganic BARC layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.