Patent · US Active

Method of fabricating a nonvolatile charge trap memory device

US8318608B2 · kind B2 · utility

45Cited by

30References

20Claims

0Family size

Assignee

Cypress Semiconductor Corporation · US

Inventors

Krishnaswamy Ramkumar · San Jose, US
Sagy Levy · Jerusalem, IL
Jeong Soo Byun · Cupertino, US

Key dates

Filing date	Aug 25, 2008
Grant date	Nov 27, 2012
Priority date	—
Expiry date	Jul 3, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH10D30/0413
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for fabricating a nonvolatile charge trap memory device is described. The method includes providing a substrate having a charge-trapping layer disposed thereon. A portion of the charge-trapping layer is then oxidized to form a blocking dielectric layer above the charge-trapping layer by exposing the charge-trapping layer to a radical oxidation process.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.