Semiconductor substrate, method for forming electrode, and method for fabricating solar cell
US8319096B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 12, 2007 |
| Grant date | Nov 27, 2012 |
| Priority date | — |
| Expiry date | Oct 19, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The present invention is directed to a semiconductor substrate having at least an electrode formed thereon, in which the electrode has a multilayer structure including two or more layers, of the multilayer structure, at least a first electrode layer directly bonded to the semiconductor substrate contains at least silver and a glass frit, and contains, as an additive, at least one of oxides of Ti, Bi, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Co, Ni, Si, Al, Ge, Sn, Pb, and Zn, and, of an electrode layer formed on the first electrode layer, at least an uppermost electrode layer to be bonded to a wire contains at least silver and a glass frit and does not contain the additive. This makes it possible to form, on a semiconductor substrate, an electrode adhered to the semiconductor substrate with sufficient adhesive strength and adhered to a wire via solder with sufficient adhesive strength by lowering both contact resistance and interconnect resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.