Light emitting device with improved light extraction efficiency
US8319238B2 · kind B2 · utility
2Cited by
0References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2010 |
| Grant date | Nov 27, 2012 |
| Priority date | — |
| Expiry date | Jul 24, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/882
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light emitting device having a high degree of light extraction efficiency includes a substrate, and a light emitting structure disposed on one surface of the substrate, the substrate having an internal reformed region where the index of refraction differs from the remainder the substrate. The ratio of the depth of the reformed region (distance between the other surface of the substrate and the reformed region) to the thickness of the substrate is in a range of between 1/8 and 9/11.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.