Semiconductor device including carbon-containing electrode and method for fabricating the same
US8319296B2 · kind B2 · utility
2Cited by
4References
31Claims
0Family size
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Key dates
| Filing date | Dec 29, 2009 |
| Grant date | Nov 27, 2012 |
| Priority date | — |
| Expiry date | Dec 23, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/482
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a semiconductor device including a carbon-containing electrode and a method for fabricating the same, an electrode has a high work function due to a carbon-containing TiN layer contained therein. It is possible to provide a dielectric layer having a high permittivity and thus to reduce the leakage current by forming an electrode having a high work function. Also, sufficient capacitance of a capacitor can be secured by employing an electrode having a high work function and a dielectric layer having a high permittivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.