Patent · US Active

Power semiconductor module, power semiconductor module assembly and method for fabricating a power semiconductor module assembly

US8319335B2 · kind B2 · utility

8Cited by

8References

25Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Reinhold Bayerer · Warstein, DE
Olaf Hohlfeld · Warstein, DE
Thilo Stolze · Arnsberg, DE

Key dates

Filing date	Apr 1, 2010
Grant date	Nov 27, 2012
Priority date	—
Expiry date	Jan 1, 2031

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T156/10
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The invention relates to a power semiconductor module including a power semiconductor chip arranged on a substrate and comprising a bottom side facing the substrate, a top side facing away from the substrate, and an electrical contact face arranged on the top side. A bond wire is bonded to the contact face. At least when the power semiconductor module is fastened to a heatsink, a contact pressure element creates a contact pressure force (F) acting on a sub-portion 36 of a bond wire portion configured between two adjacent bond sites. The contact pressure force (F) results in the power semiconductor chip and a substrate beneath being pressed against the heatsink.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.