Programmable write driver for STT-MRAM
US8320167B2 · kind B2 · utility
15Cited by
3References
32Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 16, 2010 |
| Grant date | Nov 27, 2012 |
| Priority date | — |
| Expiry date | Jan 13, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory structure comprises programmable write drivers for controlling drive strengths of write operations to storage elements. The memory structure comprises a storage element coupled to a bit line, a switching element coupled to the storage element, a source line and a word line, wherein the switching element is configured to change a logic state of the storage element. A first and a second write driver with programmable drive strengths are coupled to the bit line and source line respectively to enable control of drive strengths of write operations to the storage element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.