Inventor · Singapore, SG

Kangho Lee

87Patents
15h-index
62Co-inventors
87Inventor score

Filing activity: May 6, 1999 → Sep 14, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US9548445B2 Amorphous alloy space for perpendicular MTJs Physics 79 Active
US9245608B2 Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching device Electricity 78 Active
US9379314B2 Hybrid synthetic antiferromagnetic layer for perpendicular magnetic tunnel junction (MTJ) Electricity 63 Active
US9634237B2 Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices Electricity 45 Active
USD473879S1 Portion of a display panel or computer screen with an icon image General 39 Expired
US9935258B2 Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching device Electricity 35 Active
US6493752B1 Device and method for graphically displaying data movement in a secured network Electricity 33 Expired
US9142762B1 Magnetic tunnel junction and method for fabricating a magnetic tunnel junction Electricity 23 Active
US9589619B2 Spin-orbit-torque magnetoresistive random access memory with voltage-controlled anisotropy Physics 18 Active
US8564079B2 STT MRAM magnetic tunnel junction architecture and integration Electricity 17 Active
US9343135B2 Physically unclonable function based on programming voltage of magnetoresistive random-access memory Electricity 17 Active
US9245610B2 OTP cell with reversed MTJ connection Physics 16 Active
US9298946B2 Physically unclonable function based on breakdown voltage of metal-insulator-metal device Electricity 15 Active
US8320167B2 Programmable write driver for STT-MRAM Electricity 15 Active
US8120126B2 Magnetic tunnel junction device and fabrication Electricity 15 Active
US8547736B2 Generating a non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction Physics 14 Active
US8587993B2 Reducing source loading effect in spin torque transfer magnetoresisitive random access memory (STT-MRAM) Electricity 13 Active
US9595917B2 Antiferromagnetically coupled spin-torque oscillator with hard perpendicular polarizer Physics 12 Active
US9461094B2 Switching film structure for magnetic random access memory (MRAM) cell Physics 11 Active
US8441850B2 Magnetic random access memory (MRAM) layout with uniform pattern Emerging Cross-Sectional Technologies 10 Active
US9214624B2 Amorphous spacerlattice spacer for perpendicular MTJs Physics 10 Active
US8580583B2 Magnetic tunnel junction device and fabrication Electricity 10 Active
US9165631B2 OTP scheme with multiple magnetic tunnel junction devices in a cell Physics 9 Active
US9620706B2 Magnetic etch stop layer for spin-transfer torque magnetoresistive random access memory magnetic tunnel junction device Electricity 9 Active
US9646670B2 Spin-orbit-torque magnetoresistive random access memory with voltage-controlled anisotropy Physics 9 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.