Magnetic booster for magnetic random access memory
US8320175B2 · kind B2 · utility
3Cited by
3References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2010 |
| Grant date | Nov 27, 2012 |
| Priority date | — |
| Expiry date | Jun 18, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Disclosed is a nonvolatile magnetic memory cell, comprising: a) a switchable magnetic element; b) a word line and a bit line to energize the switchable magnetic element; and c) a magnetic field boosting material positioned adjacent to at least one of the word line and the bit line to boost a magnetic field generated by current flowing therein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.