Implementation of temperature-dependent phase switch layer for improved temperature uniformity during annealing
US8324011B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2007 |
| Grant date | Dec 4, 2012 |
| Priority date | — |
| Expiry date | Oct 15, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/268
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method of annealing a semiconductor by applying a temperature-dependant phase switch layer to a semiconductor structure. The temperature-dependant phase switch layer changes phase from amorphous to crystalline at a predetermined temperature. When the semiconductor structure is annealed, electromagnetic radiation passes through the temperature-dependant phase switch layer before reaching the semiconductor structure. When a desired annealing temperature is reached the temperature-dependant phase switch layer substantially blocks the electromagnetic radiation from reaching the semiconductor structure. As a result, the semiconductor is annealed at a consistent temperature across the wafer. The temperature at which the temperature-dependant phase switch layer changes phase can be controlled by an ion implantation process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.