Integrated complementary low voltage RF-LDMOS

US8324042B2 · kind B2 · utility

Assignee

• FAIRCHILD SEMICONDUCTOR CORPORATION · US

Inventor

• Jun Cai · Allen, US

Key dates

• Filing date: Jan 13, 2011
• Grant date: Dec 4, 2012
• Expiry date: Feb 19, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/663

Abstract

Complementary RF LDMOS transistors have gate electrodes over split gate oxides. A source spacer of a second conductivity type extends laterally from the source tap of a first conductivity type to approximately the edge of the gate electrode above the thinnest gate oxide. A body of a first conductivity type extends from approximately the bottom center of the source tap to the substrate surface and lies under most of the thin section of the split gate oxide. The source spacer is approximately the length of the gate sidewall oxide and is self aligned with gate electrode. The body is also self aligned with gate electrode. The drain is surrounded by at least one buffer region which is self aligned to the other edge of the gate electrode above the thickest gate oxide and extends to the below the drain and extends laterally under the thickest gate oxide. Both the source tap and drain are self aligned with the gate side wall oxides and are thereby spaced apart laterally from the gate electrode.