Method of producing a semiconductor device with an aluminum or aluminum alloy electrode
US8324044B2 · kind B2 · utility
1Cited by
3References
6Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 17, 2010 |
| Grant date | Dec 4, 2012 |
| Priority date | — |
| Expiry date | Dec 17, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
Abstract
A method of producing a semiconductor device that has a silicon substrate including a first major surface and a second major surface thereof, a front surface device structure being formed in a region of the first major surface, the method has a step of forming a rear electrode in a region of the second major surface, which includes evaporating or sputtering aluminum-silicon onto the second major surface to form an aluminum silicon film as a first layer of the rear electrode, the aluminum silicon film having a silicon concentration of at least 2 percent by weight when the thickness thereof is less than 0.3 μm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.