Semiconductor device and method for fabricating the same
US8324049B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2009 |
| Grant date | Dec 4, 2012 |
| Priority date | — |
| Expiry date | Nov 30, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/033
Abstract
A semiconductor device and a method for fabricating a semiconductor device are provided. The method for fabricating a semiconductor device includes forming an isolation layer over a semiconductor substrate defining first and second regions, etching the isolation layer at an edge of the first region to form a guard ring pattern, forming a buried guard ring filling the guard ring pattern, selectively etching the isolation layer of the first region to form a plurality of patterns, forming a plurality of conductive patterns in the respective patterns, and completely removing the isolation layer of the first region through a dip-out process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.